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H7N0405LD, H7N0405LS, H7N0405LM
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1367-0100 Rev.1.00 Sep 25, 2006
Features
* Low on-resistance RDS(on) = 4.0 m typ. * Low drive current. * Capable of 4.5 V gate drive
Outline
RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) )
4 4
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) )
1 1 2 3
2
1. Gate 2. Drain 3. Source 4. Drain
3
H7N0405LD
H7N0405LS
RENESAS Package code: PRSS0004AE-C (Package name: LDPAK (S)-(2) )
4 G
D
1
2
3
S
H7N0405LM
Rev.1.00 Sep 25, 2006 page 1 of 7
H7N0405LD, H7N0405LS, H7N0405LM
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Tc = 25C 3. Tch = 25C, Rg 50 Symbol VDSS VGSS ID ID (pulse)Note1 IDR IAPNote3 EARNote3 PchNote2 Tch Tstg Rating 40 20 80 320 80 40 213 80 150 -55 to +150 Unit V V A A A A mJ W C C
Electrical Characteristics
(Ta = 25C)
Item Drain to source break down voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cut off voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer admittance Total gate charge Gate to source charge Gate to drain charge Turn-off delay time Rise time Body-drain diode forward voltage Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 40 20 -- -- 1.5 -- -- 54 -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 4.0 6.2 90 5600 825 550 100 25 25 40 400 100 26 0.94 40 Max -- -- 10 10 2.5 5.0 8.7 -- -- -- -- -- -- -- -- -- -- -- -- -- Unit V V A A V m m S pF pF pF nC nC nC ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 40 V, VGS = 0 ID = 1 mA, VDS = 10 VNote4 ID = 40 A, VGS = 10 VNote4 ID = 40 A, VGS = 4.5 VNote4 ID = 40 A, VGS = 10 VNote4 VDS = 10 V, VGS = 0, f = 1 MHz VDD = 25 V, VGS = 10 V, ID = 80 A VGS = 10 V, ID = 40 A, RL = 0.75 , Rg = 4.7
IF = 80 A, VGS = 0 IF = 80 A, VGS = 0 diF/dt = 100 A/s
Rev.1.00 Sep 25, 2006 page 2 of 7
H7N0405LD, H7N0405LS, H7N0405LM
Main Characteristics
Power vs. Temperature Derating
160 1000 300 120
10
Maximum Safe Operation Area
10
0 s
Channel Dissipation Pch (W)
s
Drain Current ID (A)
100 30
1 m
10 3 1 0.3 0.1 0.03
80
DC Operation (Tc = 25C)
s
40
Operation in this area is limited by RDS(on)
PW = 10 ms (1 shot)
0
50
100
150
200
Ta = 25C 0.01 0.1 0.3 1
3
10
30
100
Case Temperature Tc (C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
100 6V 10 V 4.0 V 60 4.4 V 100
Typical Transfer Characteristics
VDS = 10 V Pulse Test
Drain Current ID (A)
Drain Current ID (A)
80
80
60
40 VGS = 3.6 V Pulse Test 0 2 4 6 8 10
40 -40C 25C Tc = 150C 0 1 2 3 4 5
20
20
Drain to Source Voltage VDS (V) Static Drain to Source on State Resistance vs. Drain Current
Drain to Source On State Resistance RDS(on) (m)
100 Pulse Test 30
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance RDS(on) (m)
Static Drain to Source on State Resistance vs. Temperature
15 Pulse Test
10
10, 20, 50 A
10
VGS = 4.5 V
4.5 V 5 10, 20, 50 A VGS = 10 V 0 -50 0 50 100 150
3
10 V
1 1 3 10 30 100
Drain Current ID (A)
Case Temperature Tc (C)
Rev.1.00 Sep 25, 2006 page 3 of 7
H7N0405LD, H7N0405LS, H7N0405LM
Typical Capacitance vs. Drain to Source Voltage
10000 3000
Dynamic Input Characteristics
100
Drain to Source Voltage VDS (V)
Capacitance C (pF)
80 VDD = 40 V 25 V 10 V VDS
VGS
16
1000 Coss 300 100 30 V = 0 GS f = 1 MHz 10 0 10 Crss
60
12
40
8
20
VDD = 40 V 25 V 10 V 40 80 120 160
4 0 200
20
30
40
50
0
Drain to Source Voltage VDS (V)
Gate Charge Qg (nc)
Reverse Drain Current vs. Source to Drain Voltage
Maximum Avalanche Energy vs. Channel Temperature Derating
Repetitive Avalanche Energy EAR (mJ)
100
250 IAP = 40 A VDD = 25 V duty < 0.1 % Rg 50
Reverse Drain Current IDR (A)
80
10 V
200
60 5V 40 VGS = 0, -5 V Pulse Test 0 0.4 0.8 1.2 1.6 2.0
150
100
20
50 0 25
50
75
100
125
150
Source to Drain Voltage VSD (V)
Channel Temperature Tch (C)
Normalized Transient Thermal Impedance s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3 Tc = 25C
1
D=1 0.5
0.3 0.2
0.1
0.1
0.05 2 0.0
ch - c(t) = s (t) * ch - c ch - c = 1.56C/ W, Tc = 25C
0.03
1 0.0
h 1s
0.01 10
ot
p
e uls
PDM PW T
D=
PW T
100
1m
10 m
100 m
1
10
100
Pulse Width PW (s)
Rev.1.00 Sep 25, 2006 page 4 of 7
Gate to Source Voltage VGS (V)
Ciss
ID = 80 A
20
H7N0405LD, H7N0405LS, H7N0405LM
Avalanche Test Circuit
EAR =
Avalanche Waveform
1 2 VDSS * L * IAP2 * VDSS - VDD
VDS Monitor
L IAP Monitor
V(BR)DSS IAP VDD ID VDS
Rg
D. U. T
Vin 15 V
50 0 VDD
Switching Time Test Circuit
Switching Time Waveform
Vin Monitor D.U.T. Rg RL
Vout Monitor Vin Vout 10% 10%
90%
10%
Vin 10 V
VDS = 30 V 90% td(on) 90% td(off) tf
tr
Rev.1.00 Sep 25, 2006 page 5 of 7
H7N0405LD, H7N0405LS, H7N0405LM
Package Dimensions
* H7N0405LD
Package Name LDPAK(L) JEITA Package Code RENESAS Code PRSS0004AE-A Previous Code LDPAK(L) / LDPAK(L)V MASS[Typ.] 1.40g
Unit: mm
(1.4)
4.44 0.2 10.2 0.3 1.3 0.15
11.3 0.5 0.3 10.0 + 0.5 -
8.6 0.3
1.3 0.2 1.37 0.2
0.76 0.1 2.54 0.5 2.54 0.5
11.0 0.5
0.2 0.86 + 0.1 -
2.49 0.2
0.4 0.1
* H7N0405LS
Package Name LDPAK(S)-(1) JEITA Package Code SC-83 RENESAS Code PRSS0004AE-B Previous Code LDPAK(S)-(1) / LDPAK(S)-(1)V MASS[Typ.] 1.30g
Unit: mm
4.44 0.2 10.2 0.3
(1.4)
8.6 0.3
+ 0.3 - 0.5
10.0
(1.5)
(1.5)
2.49 0.2 0.2 0.1 + 0.1 -
7.8 7.0
2.2
1.37 0.2 1.3 0.2 2.54 0.5
0.3 3.0 + 0.5 -
0.2 0.86 + 0.1 -
0.4 0.1
2.54 0.5
Rev.1.00 Sep 25, 2006 page 6 of 7
1.7
1.3 0.15
7.8 6.6
H7N0405LD, H7N0405LS, H7N0405LM * H7N0405LM
Package Name LDPAK(S)-(2) JEITA Package Code RENESAS Code PRSS0004AE-C Previous Code LDPAK(S)-(2) / LDPAK(S)-(2)V MASS[Typ.] 1.35g
Unit: mm
4.44 0.2 10.2 0.3
(1.4)
8.6 0.3
+ 0.3 - 0.5
2.49 0.2
10.0
(1.5)
(2.3)
0.2 0.1 + 0.1 -
7.8 7.0
2.2
1.37 0.2 1.3 0.2 2.54 0.5 0.4 0.1
0.3 5.0 + 0.5 -
0.2 0.86 + 0.1 -
2.54 0.5
Ordering Information
Part Name H7N0405LD-E H7N0405LSTL-E H7N0405LMTL-E Quantity 500 pcs 1000 pcs 1000 pcs Shipping Container Box (Conductive Sack) Taping Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.1.00 Sep 25, 2006 page 7 of 7
1.7
1.3 0.15
7.8 6.6
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
RENESAS SALES OFFICES
Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology (Shanghai) Co., Ltd. Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120 Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7898 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145
http://www.renesas.com
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(c) 2006. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .6.0

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